Infineon Technologies - IPB065N10N3GATMA1

KEY Part #: K6418653

IPB065N10N3GATMA1 Bei (USD) [72145pcs Hisa]

  • 1 pcs$0.54197
  • 1,000 pcs$0.49715

Nambari ya Sehemu:
IPB065N10N3GATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB065N10N3GATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB065N10N3GATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH TO263-3
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 6.5 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 90µA
Malango ya Lango (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4910pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 150W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263AB)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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