ON Semiconductor - IRFW630BTM-FP001

KEY Part #: K6420259

IRFW630BTM-FP001 Bei (USD) [175759pcs Hisa]

  • 1 pcs$0.21045

Nambari ya Sehemu:
IRFW630BTM-FP001
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 200V 9A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa, Viwango - RF, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFW630BTM-FP001 Sifa za Bidhaa

Nambari ya Sehemu : IRFW630BTM-FP001
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 200V 9A D2PAK
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 400 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 720pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.13W (Ta), 72W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263AB)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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