Nambari ya Sehemu :
IPD031N06L3GATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 60V 100A TO252-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 93µA
Malango ya Lango (Qg) (Max) @ Vgs :
79nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
13000pF @ 30V
Kuondoa Nguvu (Max) :
167W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63