Nexperia USA Inc. - PDTA123ET,215

KEY Part #: K6527091

PDTA123ET,215 Bei (USD) [2960475pcs Hisa]

  • 1 pcs$0.07119
  • 10 pcs$0.06644
  • 100 pcs$0.03607
  • 500 pcs$0.02220
  • 1,000 pcs$0.01514

Nambari ya Sehemu:
PDTA123ET,215
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
TRANS PREBIAS PNP 250MW TO236AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Nexperia USA Inc. PDTA123ET,215 electronic components. PDTA123ET,215 can be shipped within 24 hours after order. If you have any demands for PDTA123ET,215, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PDTA123ET,215 Sifa za Bidhaa

Nambari ya Sehemu : PDTA123ET,215
Mzalishaji : Nexperia USA Inc.
Maelezo : TRANS PREBIAS PNP 250MW TO236AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 2.2 kOhms
Upinzani - Base ya Emitter (R2) : 2.2 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : -
Nguvu - Max : 250mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : TO-236AB

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