[2688pcs Hisa]
- Nambari ya Sehemu:
- RN1106MFV(TL3,T)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS PREBIAS NPN 0.15W VESM.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Zener - Moja, Transistors - JFETs, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays and Transistors - FET, MOSFETs - Moja ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage RN1106MFV(TL3,T) electronic components. RN1106MFV(TL3,T) can be shipped within 24 hours after order. If you have any demands for RN1106MFV(TL3,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1106MFV(TL3,T) Sifa za Bidhaa
Nambari ya Sehemu :
RN1106MFV(TL3,T)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS PREBIAS NPN 0.15W VESM
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya Transistor :
NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
4.7 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
150mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-723
Kifurushi cha Kifaa cha Mtoaji :
VESM
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