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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Moja, Iliyopendekezw
  5. FJV4102RMTF

ON Semiconductor - FJV4102RMTF

KEY Part #: K6527827

FJV4102RMTF Bei (USD) [2702pcs Hisa]

  • 21,000 pcs$0.01144
Nambari ya Sehemu:
FJV4102RMTF
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS PREBIAS PNP 200MW SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - Zener - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in ON Semiconductor FJV4102RMTF electronic components. FJV4102RMTF can be shipped within 24 hours after order. If you have any demands for FJV4102RMTF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FJV4102RMTF Sifa za Bidhaa

Nambari ya Sehemu : FJV4102RMTF
Mzalishaji : ON Semiconductor
Maelezo : TRANS PREBIAS PNP 200MW SOT23-3
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 10 kOhms
Upinzani - Base ya Emitter (R2) : 10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : 200MHz
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3 (TO-236)

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