SI7900AEDN-T1-GE3 Bei (USD) [167720pcs Hisa]
- 1 pcs$0.22053
- 3,000 pcs$0.20708
- Nambari ya Sehemu:
- SI7900AEDN-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 20V 6A PPAK 1212-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moja and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI7900AEDN-T1-GE3 electronic components. SI7900AEDN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7900AEDN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7900AEDN-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI7900AEDN-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 20V 6A PPAK 1212-8
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Common Drain
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A
Njia ya Kutumia (Max) @ Id, Vgs :
26 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
16nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
1.5W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® 1212-8 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 1212-8 Dual
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