TK39J60W,S1VQ Bei (USD) [9590pcs Hisa]
- 1 pcs$4.72871
- 25 pcs$3.87569
- 100 pcs$3.49762
- 500 pcs$2.93043
- Nambari ya Sehemu:
- TK39J60W,S1VQ
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 600V 38.8A TO-3P.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - RF and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK39J60W,S1VQ electronic components. TK39J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK39J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39J60W,S1VQ Sifa za Bidhaa
Nambari ya Sehemu :
TK39J60W,S1VQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 600V 38.8A TO-3P
Mfululizo :
DTMOSIV
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
38.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
65 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.9mA
Malango ya Lango (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4100pF @ 300V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
270W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-3P(N)
Kifurushi / Kesi :
TO-3P-3, SC-65-3
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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