TK31N60W,S1VF Bei (USD) [11067pcs Hisa]
- 1 pcs$4.09851
- 30 pcs$3.35902
- 120 pcs$3.03128
- 510 pcs$2.53971
- Nambari ya Sehemu:
- TK31N60W,S1VF
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N CH 600V 30.8A TO247.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Thyristors - SCR, Viwango - Rectifiers - Arrays, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Arrays and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK31N60W,S1VF electronic components. TK31N60W,S1VF can be shipped within 24 hours after order. If you have any demands for TK31N60W,S1VF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31N60W,S1VF Sifa za Bidhaa
Nambari ya Sehemu :
TK31N60W,S1VF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 600V 30.8A TO247
Mfululizo :
DTMOSIV
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
30.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Malango ya Lango (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3000pF @ 300V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
230W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247
Kifurushi / Kesi :
TO-247-3
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