IXTB30N100L Bei (USD) [2171pcs Hisa]
- 1 pcs$22.06054
- 25 pcs$21.95078
- Nambari ya Sehemu:
- IXTB30N100L
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1000V 30A PLUS264.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in IXYS IXTB30N100L electronic components. IXTB30N100L can be shipped within 24 hours after order. If you have any demands for IXTB30N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTB30N100L Sifa za Bidhaa
Nambari ya Sehemu :
IXTB30N100L
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1000V 30A PLUS264
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
30A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
20V
Njia ya Kutumia (Max) @ Id, Vgs :
450 mOhm @ 500mA, 20V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
545nC @ 20V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
13200pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
800W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PLUS264™
Kifurushi / Kesi :
TO-264-3, TO-264AA
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