SIHU3N50D-GE3 Bei (USD) [237821pcs Hisa]
- 1 pcs$0.15553
- 3,000 pcs$0.14635
- Nambari ya Sehemu:
- SIHU3N50D-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 500V 3A TO251 IPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Moja, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIHU3N50D-GE3 electronic components. SIHU3N50D-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU3N50D-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU3N50D-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIHU3N50D-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 500V 3A TO251 IPAK
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
500V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.2 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
175pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
69W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-251
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA
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