Rohm Semiconductor - RS3E135BNGZETB

KEY Part #: K6403227

RS3E135BNGZETB Bei (USD) [248329pcs Hisa]

  • 1 pcs$0.14895
  • 2,500 pcs$0.14130

Nambari ya Sehemu:
RS3E135BNGZETB
Mzalishaji:
Rohm Semiconductor
Maelezo ya kina:
MOSFET N-CHANNEL 30V 9.5A 8SOP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Thyristors - TRIAC, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS3E135BNGZETB Sifa za Bidhaa

Nambari ya Sehemu : RS3E135BNGZETB
Mzalishaji : Rohm Semiconductor
Maelezo : MOSFET N-CHANNEL 30V 9.5A 8SOP
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 14.6 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 8.3nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 680pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SOP
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)