[856pcs Hisa]
- Nambari ya Sehemu:
- TK55D10J1(Q)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 100V 55A TO220W.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - Kusudi Maalum, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK55D10J1(Q) electronic components. TK55D10J1(Q) can be shipped within 24 hours after order. If you have any demands for TK55D10J1(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK55D10J1(Q) Sifa za Bidhaa
Nambari ya Sehemu :
TK55D10J1(Q)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 100V 55A TO220W
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
55A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
10.5 mOhm @ 27A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
5700pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
140W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220(W)
Kifurushi / Kesi :
TO-220-3
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