Infineon Technologies - BSC265N10LSFGATMA1

KEY Part #: K6420427

BSC265N10LSFGATMA1 Bei (USD) [194119pcs Hisa]

  • 1 pcs$0.19054
  • 5,000 pcs$0.18290

Nambari ya Sehemu:
BSC265N10LSFGATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 100V 40A TDSON-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Arrays and Thyristors - SCR ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC265N10LSFGATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSC265N10LSFGATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 100V 40A TDSON-8
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.5A (Ta), 40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 26.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 43µA
Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1600pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 78W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TDSON-8
Kifurushi / Kesi : 8-PowerTDFN

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