Vishay Siliconix - SIS430DN-T1-GE3

KEY Part #: K6416132

SIS430DN-T1-GE3 Bei (USD) [12170pcs Hisa]

  • 3,000 pcs$0.18881

Nambari ya Sehemu:
SIS430DN-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 25V 35A PPAK 1212-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Transistors - IGBTs - Moja and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIS430DN-T1-GE3 electronic components. SIS430DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS430DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIS430DN-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIS430DN-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 25V 35A PPAK 1212-8
Mfululizo : TrenchFET®
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 5.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1600pF @ 12.5V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.8W (Ta), 52W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8
Kifurushi / Kesi : PowerPAK® 1212-8