Infineon Technologies - BSR316PH6327XTSA1

KEY Part #: K6421432

BSR316PH6327XTSA1 Bei (USD) [541461pcs Hisa]

  • 1 pcs$0.06831
  • 3,000 pcs$0.06389

Nambari ya Sehemu:
BSR316PH6327XTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET P-CH 100V 360MA SC-59-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Arrays and Thyristors - TRIAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSR316PH6327XTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BSR316PH6327XTSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET P-CH 100V 360MA SC-59-3
Mfululizo : SIPMOS®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 360mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.8 Ohm @ 360mA, 10V
Vgs (th) (Max) @ Id : 1V @ 170µA
Malango ya Lango (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 165pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-SC-59
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3