FESB16DT-E3/81 Bei (USD) [84873pcs Hisa]
- 1 pcs$0.46070
- 800 pcs$0.42754
- Nambari ya Sehemu:
- FESB16DT-E3/81
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 200V 16A TO263AB. Rectifiers 16 Amp 200 Volt 35ns
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Arrays, Thyristors - SCR, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division FESB16DT-E3/81 electronic components. FESB16DT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB16DT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB16DT-E3/81 Sifa za Bidhaa
Nambari ya Sehemu :
FESB16DT-E3/81
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 200V 16A TO263AB
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
200V
Sasa - Wastani Aliyerekebishwa (Io) :
16A
Voltage - Mbele (Vf) (Max) @ Kama :
975mV @ 16A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
35ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 200V
Uwezo @ Vr, F :
175pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
TO-263AB
Joto la Kufanya kazi - Junction :
-65°C ~ 150°C
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