IXTP6N100D2 Bei (USD) [15612pcs Hisa]
- 1 pcs$2.90421
- 10 pcs$2.59352
- 100 pcs$2.12669
- 500 pcs$1.72210
- 1,000 pcs$1.45237
- Nambari ya Sehemu:
- IXTP6N100D2
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1000V 6A TO220AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Transistors - JFETs, Transistors - IGBTs - Moduli, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in IXYS IXTP6N100D2 electronic components. IXTP6N100D2 can be shipped within 24 hours after order. If you have any demands for IXTP6N100D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP6N100D2 Sifa za Bidhaa
Nambari ya Sehemu :
IXTP6N100D2
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1000V 6A TO220AB
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
-
Njia ya Kutumia (Max) @ Id, Vgs :
2.2 Ohm @ 3A, 0V
Vgs (th) (Max) @ Id :
-
Malango ya Lango (Qg) (Max) @ Vgs :
95nC @ 5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2650pF @ 25V
Makala ya FET :
Depletion Mode
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220AB
Kifurushi / Kesi :
TO-220-3
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