IRFH5110TRPBF Bei (USD) [148117pcs Hisa]
- 1 pcs$0.24972
- 4,000 pcs$0.23973
- Nambari ya Sehemu:
- IRFH5110TRPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 100V 11A 8-PQFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRFH5110TRPBF electronic components. IRFH5110TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH5110TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5110TRPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFH5110TRPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 11A 8-PQFN
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
11A (Ta), 63A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
12.4 mOhm @ 37A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3152pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.6W (Ta), 114W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-PQFN (5x6)
Kifurushi / Kesi :
8-PowerVDFN
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