NXP USA Inc. - PSMN5R8-30LL,115

KEY Part #: K6406285

[1373pcs Hisa]


    Nambari ya Sehemu:
    PSMN5R8-30LL,115
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET N-CH 30V QFN3333.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - RF, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - RF and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. PSMN5R8-30LL,115 electronic components. PSMN5R8-30LL,115 can be shipped within 24 hours after order. If you have any demands for PSMN5R8-30LL,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PSMN5R8-30LL,115 Sifa za Bidhaa

    Nambari ya Sehemu : PSMN5R8-30LL,115
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET N-CH 30V QFN3333
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 40A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 5.8 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 2.15V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 24nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 1316pF @ 15V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 55W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : 8-DFN3333 (3.3x3.3)
    Kifurushi / Kesi : 8-VDFN Exposed Pad

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