Vishay Siliconix - SI2306BDS-T1-E3

KEY Part #: K6416271

SI2306BDS-T1-E3 Bei (USD) [383787pcs Hisa]

  • 1 pcs$0.09638
  • 3,000 pcs$0.09104

Nambari ya Sehemu:
SI2306BDS-T1-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 30V 3.16A SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Moja, Thyristors - TRIAC, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI2306BDS-T1-E3 electronic components. SI2306BDS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2306BDS-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2306BDS-T1-E3 Sifa za Bidhaa

Nambari ya Sehemu : SI2306BDS-T1-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 30V 3.16A SOT23-3
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.16A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 47 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 4.5nC @ 5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 305pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 750mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3 (TO-236)
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3