SQD19P06-60L_GE3 Bei (USD) [130121pcs Hisa]
- 1 pcs$0.69823
- 10 pcs$0.61670
- 100 pcs$0.48746
- 500 pcs$0.37802
- 1,000 pcs$0.28230
- Nambari ya Sehemu:
- SQD19P06-60L_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 60V 20A TO252.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Transistors - IGBTs - Moja, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays, Viwango - Bridge Rectifiers and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQD19P06-60L_GE3 electronic components. SQD19P06-60L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD19P06-60L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD19P06-60L_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQD19P06-60L_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 60V 20A TO252
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
20A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
55 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1490pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
46W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252, (D-Pak)
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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