Infineon Technologies - IPL60R185P7AUMA1

KEY Part #: K6418432

IPL60R185P7AUMA1 Bei (USD) [63618pcs Hisa]

  • 1 pcs$0.62193
  • 3,000 pcs$0.61884

Nambari ya Sehemu:
IPL60R185P7AUMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 650V 19A VSON-4.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPL60R185P7AUMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPL60R185P7AUMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 650V 19A VSON-4
Mfululizo : CoolMOS™ P7
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 19A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 185 mOhm @ 5.6A, 10V
Vgs (th) (Max) @ Id : 4V @ 280µA
Malango ya Lango (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1081pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 81W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-VSON-4
Kifurushi / Kesi : 4-PowerTSFN

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