Infineon Technologies - IPZ60R041P6FKSA1

KEY Part #: K6401827

IPZ60R041P6FKSA1 Bei (USD) [2916pcs Hisa]

  • 240 pcs$4.24387

Nambari ya Sehemu:
IPZ60R041P6FKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 600V TO247-4.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Moja, Viwango - RF, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Arrays and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPZ60R041P6FKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPZ60R041P6FKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 600V TO247-4
Mfululizo : CoolMOS™ P6
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 77.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 41 mOhm @ 35.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 2.96mA
Malango ya Lango (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 8180pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 481W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO247-4
Kifurushi / Kesi : TO-247-4

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