Nexperia USA Inc. - BUK765R0-100E,118

KEY Part #: K6416330

BUK765R0-100E,118 Bei (USD) [60801pcs Hisa]

  • 1 pcs$0.64631
  • 800 pcs$0.64309

Nambari ya Sehemu:
BUK765R0-100E,118
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET N-CH 100V 120A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK765R0-100E,118 Sifa za Bidhaa

Nambari ya Sehemu : BUK765R0-100E,118
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET N-CH 100V 120A D2PAK
Mfululizo : Automotive, AEC-Q101, TrenchMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 11810pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 357W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D2PAK
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB