IRFU13N20DPBF Bei (USD) [67281pcs Hisa]
- 1 pcs$0.56025
- 10 pcs$0.49587
- 100 pcs$0.39180
- 500 pcs$0.28741
- 1,000 pcs$0.22690
- Nambari ya Sehemu:
- IRFU13N20DPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 200V 13A I-PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Moja, Thyristors - SCR, Viwango - Zener - Moja and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRFU13N20DPBF electronic components. IRFU13N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFU13N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFU13N20DPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFU13N20DPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 200V 13A I-PAK
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
235 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
830pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
110W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
IPAK (TO-251)
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA
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