Vishay Siliconix - SQD10N30-330H_GE3

KEY Part #: K6419702

SQD10N30-330H_GE3 Bei (USD) [126516pcs Hisa]

  • 1 pcs$0.29235

Nambari ya Sehemu:
SQD10N30-330H_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 300V 10A TO252AA.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Thyristors - TRIAC and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQD10N30-330H_GE3 electronic components. SQD10N30-330H_GE3 can be shipped within 24 hours after order. If you have any demands for SQD10N30-330H_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQD10N30-330H_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQD10N30-330H_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 300V 10A TO252AA
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 300V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 330 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2190pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 107W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252AA
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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