Toshiba Semiconductor and Storage - TPN5900CNH,L1Q

KEY Part #: K6420387

TPN5900CNH,L1Q Bei (USD) [190315pcs Hisa]

  • 1 pcs$0.20411
  • 5,000 pcs$0.20309

Nambari ya Sehemu:
TPN5900CNH,L1Q
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET N-CH 150V 9A 8TSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Viwango - RF, Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - Kusudi Maalum and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TPN5900CNH,L1Q electronic components. TPN5900CNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN5900CNH,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN5900CNH,L1Q Sifa za Bidhaa

Nambari ya Sehemu : TPN5900CNH,L1Q
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET N-CH 150V 9A 8TSON
Mfululizo : U-MOSVIII-H
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 150V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 59 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 600pF @ 75V
Makala ya FET : -
Kuondoa Nguvu (Max) : 700mW (Ta), 39W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-TSON Advance (3.3x3.3)
Kifurushi / Kesi : 8-PowerVDFN

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