IRFB59N10DPBF Bei (USD) [37557pcs Hisa]
- 1 pcs$0.99926
- 10 pcs$0.90393
- 100 pcs$0.72645
- 500 pcs$0.56500
- 1,000 pcs$0.46814
- Nambari ya Sehemu:
- IRFB59N10DPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 100V 59A TO-220AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Transistors - Ushirikiano uliopangwa and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRFB59N10DPBF electronic components. IRFB59N10DPBF can be shipped within 24 hours after order. If you have any demands for IRFB59N10DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB59N10DPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFB59N10DPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 59A TO-220AB
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
59A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
25 mOhm @ 35.4A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2450pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.8W (Ta), 200W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220AB
Kifurushi / Kesi :
TO-220-3
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