Diodes Incorporated - DMTH10H010SCT

KEY Part #: K6393889

DMTH10H010SCT Bei (USD) [68703pcs Hisa]

  • 1 pcs$0.56912

Nambari ya Sehemu:
DMTH10H010SCT
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET BVDSS 61V-100V TO220AB T.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMTH10H010SCT electronic components. DMTH10H010SCT can be shipped within 24 hours after order. If you have any demands for DMTH10H010SCT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH10H010SCT Sifa za Bidhaa

Nambari ya Sehemu : DMTH10H010SCT
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET BVDSS 61V-100V TO220AB T
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 100A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 9.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 56.4nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4468pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 187W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220AB
Kifurushi / Kesi : TO-220-3

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