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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  1. Nyumbani
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  4. Transistors - FET, MOSFETs - Arrays
  5. APTM50DDA10T3G

Microsemi Corporation - APTM50DDA10T3G

KEY Part #: K6522635

APTM50DDA10T3G Bei (USD) [2118pcs Hisa]

  • 1 pcs$20.55101
  • 100 pcs$20.44876
Nambari ya Sehemu:
APTM50DDA10T3G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET 2N-CH 500V 37A SP3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moduli and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Microsemi Corporation APTM50DDA10T3G electronic components. APTM50DDA10T3G can be shipped within 24 hours after order. If you have any demands for APTM50DDA10T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM50DDA10T3G Sifa za Bidhaa

Nambari ya Sehemu : APTM50DDA10T3G
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET 2N-CH 500V 37A SP3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 500V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 37A
Njia ya Kutumia (Max) @ Id, Vgs : 120 mOhm @ 18.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 96nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4367pF @ 25V
Nguvu - Max : 312W
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : SP3
Kifurushi cha Kifaa cha Mtoaji : SP3

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