SI4925BDY-T1-GE3 Bei (USD) [114503pcs Hisa]
- 1 pcs$0.32464
- 2,500 pcs$0.32302
- Nambari ya Sehemu:
- SI4925BDY-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2P-CH 30V 5.3A 8-SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - RF, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI4925BDY-T1-GE3 electronic components. SI4925BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4925BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4925BDY-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI4925BDY-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2P-CH 30V 5.3A 8-SOIC
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 P-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.3A
Njia ya Kutumia (Max) @ Id, Vgs :
25 mOhm @ 7.1A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
50nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
1.1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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