IXYS - IXTA1R6N100D2HV

KEY Part #: K6394711

IXTA1R6N100D2HV Bei (USD) [36141pcs Hisa]

  • 1 pcs$1.08188

Nambari ya Sehemu:
IXTA1R6N100D2HV
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Viwango - RF, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
We specialize in IXYS IXTA1R6N100D2HV electronic components. IXTA1R6N100D2HV can be shipped within 24 hours after order. If you have any demands for IXTA1R6N100D2HV, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA1R6N100D2HV Sifa za Bidhaa

Nambari ya Sehemu : IXTA1R6N100D2HV
Mzalishaji : IXYS
Maelezo : MOSFET N-CH
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.6A (Tj)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 0V
Njia ya Kutumia (Max) @ Id, Vgs : 10 Ohm @ 800mA, 0V
Vgs (th) (Max) @ Id : 4.5V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs : 27nC @ 5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 645pF @ 10V
Makala ya FET : Depletion Mode
Kuondoa Nguvu (Max) : 100W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-263HV
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB