Nambari ya Sehemu :
SIA477EDJT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 12V 12A SC70-6
Mfululizo :
TrenchFET® Gen III
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
13 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
50nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3050pF @ 6V
Kuondoa Nguvu (Max) :
19W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SC-70-6 Single
Kifurushi / Kesi :
PowerPAK® SC-70-6