IPDD60R150G7XTMA1 Bei (USD) [49176pcs Hisa]
- 1 pcs$0.79512
- Nambari ya Sehemu:
- IPDD60R150G7XTMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET NCH 650V 45A PG-HDSOP-10.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPDD60R150G7XTMA1 electronic components. IPDD60R150G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPDD60R150G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPDD60R150G7XTMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPDD60R150G7XTMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET NCH 650V 45A PG-HDSOP-10
Mfululizo :
CoolMOS™ G7
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
16A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
150 mOhm @ 5.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 260µA
Malango ya Lango (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
902pF @ 400V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
95W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-HDSOP-10-1
Kifurushi / Kesi :
10-PowerSOP Module
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