Nambari ya Sehemu :
RQ3E180AJTB
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 30V 18A HSMR8
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
18A (Ta), 30A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
4.5 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 11mA
Malango ya Lango (Qg) (Max) @ Vgs :
39nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4290pF @ 15V
Kuondoa Nguvu (Max) :
2W (Ta), 30W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-HSMT (3.2x3)
Kifurushi / Kesi :
8-PowerVDFN