MT29F4G08ABADAWP-IT:D TR Bei (USD) [17173pcs Hisa]
- 1 pcs$2.69811
- 1,000 pcs$2.68469
- Nambari ya Sehemu:
- MT29F4G08ABADAWP-IT:D TR
- Mzalishaji:
- Micron Technology Inc.
- Maelezo ya kina:
- IC FLASH 4G PARALLEL 48TSOP I. NAND Flash SLC 4G 512MX8 TSOP
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Onyesha Madereva, PMIC - Watawala wa Nguvu Zaidi ya Ethernet (PoE), Mantiki - Kumbukumbu za FIFO, Linear - Amplifiers - Amps za Video na Moduli, Iliyoingizwa - FPGAs (shamba iliyopangwa kwa lango, Iliyoingizwa - Mfumo kwenye Chip (SoC), Upataji wa data - Potentiometers za dijiti and Upataji wa Takwimu - Mwisho wa Analog Mbele (AFE) ...
- Faida ya Ushindani:
- We specialize in Micron Technology Inc. MT29F4G08ABADAWP-IT:D TR electronic components. MT29F4G08ABADAWP-IT:D TR can be shipped within 24 hours after order. If you have any demands for MT29F4G08ABADAWP-IT:D TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT29F4G08ABADAWP-IT:D TR Sifa za Bidhaa
Nambari ya Sehemu :
MT29F4G08ABADAWP-IT:D TR
Mzalishaji :
Micron Technology Inc.
Maelezo :
IC FLASH 4G PARALLEL 48TSOP I
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya kumbukumbu :
Non-Volatile
Fomati ya kumbukumbu :
FLASH
Teknolojia :
FLASH - NAND
Saizi ya kumbukumbu :
4Gb (512M x 8)
Usafirishaji wa Saa :
-
Andika Wakati wa Msaada - Neno, Ukurasa :
-
Wakati wa Upataji :
-
Maingiliano ya kumbukumbu :
Parallel
Voltage - Ugavi :
2.7V ~ 3.6V
Joto la Kufanya kazi :
-40°C ~ 85°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
48-TFSOP (0.724", 18.40mm Width)
Kifurushi cha Kifaa cha Mtoaji :
48-TSOP I
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
-
-
71V25761S183PFGI8
IDT, Integrated Device Technology Inc
IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4Mb PBSRAM 128K x 36 w/2.5V I/O Pipeline
-
-
TH58BYG2S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 4G PARALLEL 67VFBGA. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
-
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