Toshiba Memory America, Inc. - TH58BYG2S3HBAI6

KEY Part #: K937444

TH58BYG2S3HBAI6 Bei (USD) [16879pcs Hisa]

  • 1 pcs$2.25638
  • 10 pcs$2.04661
  • 25 pcs$2.00236
  • 50 pcs$1.99126

Nambari ya Sehemu:
TH58BYG2S3HBAI6
Mzalishaji:
Toshiba Memory America, Inc.
Maelezo ya kina:
IC FLASH 4G PARALLEL 67VFBGA. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Wasafirishaji, Watangazaji, Wabadili, PMIC - Taa, Kidhibiti cha Ballast, Iliyoingizwa - Microprocessors, Iliyoingizwa - Mfumo kwenye Chip (SoC), Maingiliano - vichungi - Inayotumika, Iliyoingizwa - Microcontroller, Microprocessor, Mo, Saa / Saa - Maombi Maalum and Maelewano - Utaratibu wa Dijiti wa moja kwa moja ( ...
Faida ya Ushindani:
We specialize in Toshiba Memory America, Inc. TH58BYG2S3HBAI6 electronic components. TH58BYG2S3HBAI6 can be shipped within 24 hours after order. If you have any demands for TH58BYG2S3HBAI6, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TH58BYG2S3HBAI6 Sifa za Bidhaa

Nambari ya Sehemu : TH58BYG2S3HBAI6
Mzalishaji : Toshiba Memory America, Inc.
Maelezo : IC FLASH 4G PARALLEL 67VFBGA
Mfululizo : Benand™
Hali ya Sehemu : Active
Aina ya kumbukumbu : Non-Volatile
Fomati ya kumbukumbu : FLASH
Teknolojia : FLASH - NAND (SLC)
Saizi ya kumbukumbu : 4Gb (512M x 8)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 25ns
Wakati wa Upataji : 25ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 67-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 67-VFBGA (6.5x8)

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