IRFIBE30GPBF Bei (USD) [30363pcs Hisa]
- 1 pcs$1.18548
- 10 pcs$1.01724
- 100 pcs$0.81751
- 500 pcs$0.63583
- 1,000 pcs$0.52683
- Nambari ya Sehemu:
- IRFIBE30GPBF
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 800V 2.1A TO220FP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - TRIAC, Transistors - Kusudi Maalum and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix IRFIBE30GPBF electronic components. IRFIBE30GPBF can be shipped within 24 hours after order. If you have any demands for IRFIBE30GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFIBE30GPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFIBE30GPBF
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 800V 2.1A TO220FP
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
3 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1300pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
35W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220-3
Kifurushi / Kesi :
TO-220-3 Full Pack, Isolated Tab
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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