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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FDMS86163P

ON Semiconductor - FDMS86163P

KEY Part #: K6397350

FDMS86163P Bei (USD) [83412pcs Hisa]

  • 1 pcs$0.46877
  • 3,000 pcs$0.40357
Nambari ya Sehemu:
FDMS86163P
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET P-CH 100V 7.9A POWER56.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - JFETs and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDMS86163P electronic components. FDMS86163P can be shipped within 24 hours after order. If you have any demands for FDMS86163P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS86163P Sifa za Bidhaa

Nambari ya Sehemu : FDMS86163P
Mzalishaji : ON Semiconductor
Maelezo : MOSFET P-CH 100V 7.9A POWER56
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.9A (Ta), 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 22 mOhm @ 7.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 59nC @ 10V
Vgs (Max) : ±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4085pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 104W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-PQFN (5x6)
Kifurushi / Kesi : 8-PowerTDFN

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