PSMN3R3-80ES,127 Bei (USD) [50791pcs Hisa]
- 1 pcs$0.77366
- 1,000 pcs$0.76981
- Nambari ya Sehemu:
- PSMN3R3-80ES,127
- Mzalishaji:
- Nexperia USA Inc.
- Maelezo ya kina:
- MOSFET N-CH 80V 120A I2PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCRs - Moduli, Moduli za Dereva za Nguvu and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in Nexperia USA Inc. PSMN3R3-80ES,127 electronic components. PSMN3R3-80ES,127 can be shipped within 24 hours after order. If you have any demands for PSMN3R3-80ES,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN3R3-80ES,127 Sifa za Bidhaa
Nambari ya Sehemu :
PSMN3R3-80ES,127
Mzalishaji :
Nexperia USA Inc.
Maelezo :
MOSFET N-CH 80V 120A I2PAK
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
139nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
9961pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
338W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
I2PAK
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA
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