Nexperia USA Inc. - PHD101NQ03LT,118

KEY Part #: K6420798

PHD101NQ03LT,118 Bei (USD) [257847pcs Hisa]

  • 1 pcs$0.14417
  • 10,000 pcs$0.14345

Nambari ya Sehemu:
PHD101NQ03LT,118
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET N-CH 30V 75A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PHD101NQ03LT,118 Sifa za Bidhaa

Nambari ya Sehemu : PHD101NQ03LT,118
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET N-CH 30V 75A DPAK
Mfululizo : TrenchMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 75A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 5.5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 23nC @ 5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2180pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 166W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DPAK
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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