ZXMN10A25GTA Bei (USD) [164765pcs Hisa]
- 1 pcs$0.22561
- 1,000 pcs$0.22449
- Nambari ya Sehemu:
- ZXMN10A25GTA
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 100V 2.9A SOT223.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - RF, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Thyristors - SCR and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated ZXMN10A25GTA electronic components. ZXMN10A25GTA can be shipped within 24 hours after order. If you have any demands for ZXMN10A25GTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN10A25GTA Sifa za Bidhaa
Nambari ya Sehemu :
ZXMN10A25GTA
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 100V 2.9A SOT223
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
125 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
859pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-223
Kifurushi / Kesi :
TO-261-4, TO-261AA
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