[2483pcs Hisa]
- Nambari ya Sehemu:
- RQJ0303PGDQA#H6
- Mzalishaji:
- Renesas Electronics America
- Maelezo ya kina:
- MOSFET P-CH 30V 3.3A 3MPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Thyristors - TRIAC and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Renesas Electronics America RQJ0303PGDQA#H6 electronic components. RQJ0303PGDQA#H6 can be shipped within 24 hours after order. If you have any demands for RQJ0303PGDQA#H6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQJ0303PGDQA#H6 Sifa za Bidhaa
Nambari ya Sehemu :
RQJ0303PGDQA#H6
Mzalishaji :
Renesas Electronics America
Maelezo :
MOSFET P-CH 30V 3.3A 3MPAK
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
68 mOhm @ 1.6A, 10V
Vgs (th) (Max) @ Id :
-
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
+10V, -20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
625pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
800mW (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
3-MPAK
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
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