Diodes Incorporated - DMN2058UW-7

KEY Part #: K6393322

DMN2058UW-7 Bei (USD) [1166683pcs Hisa]

  • 1 pcs$0.03170

Nambari ya Sehemu:
DMN2058UW-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CHAN 8V 24V SOT323.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN2058UW-7 electronic components. DMN2058UW-7 can be shipped within 24 hours after order. If you have any demands for DMN2058UW-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2058UW-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN2058UW-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CHAN 8V 24V SOT323
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.8V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 42 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 7.7nC @ 10V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 281pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-323
Kifurushi / Kesi : SC-70, SOT-323