Infineon Technologies - BSC670N25NSFDATMA1

KEY Part #: K6418490

BSC670N25NSFDATMA1 Bei (USD) [65866pcs Hisa]

  • 1 pcs$0.59364
  • 5,000 pcs$0.54461

Nambari ya Sehemu:
BSC670N25NSFDATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 250V 24A 8TDSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - JFETs, Viwango - RF and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC670N25NSFDATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSC670N25NSFDATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 250V 24A 8TDSON
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 250V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 24A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 67 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id : 4V @ 90µA
Malango ya Lango (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2410pF @ 125V
Makala ya FET : -
Kuondoa Nguvu (Max) : 150W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TDSON-8
Kifurushi / Kesi : 8-PowerTDFN

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