Nambari ya Sehemu :
RN2606(TE85L,F)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS 2PNP PREBIAS 0.3W SM6
Aina ya Transistor :
2 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
4.7 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
Mara kwa mara - Mpito :
200MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SC-74, SOT-457
Kifurushi cha Kifaa cha Mtoaji :
SM6