Nambari ya Sehemu :
RN1911(T5L,F,T)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS 2NPN PREBIAS 0.1W US6
Aina ya Transistor :
2 NPN - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
4.7 kOhms
Upinzani - Base ya Emitter (R2) :
-
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
Mara kwa mara - Mpito :
250MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
US6