IXTP3N120 Bei (USD) [14704pcs Hisa]
- 1 pcs$3.22152
- 10 pcs$2.87601
- 100 pcs$2.35841
- 500 pcs$1.90975
- 1,000 pcs$1.61063
- Nambari ya Sehemu:
- IXTP3N120
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1.2KV 3A TO-220AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - JFETs, Moduli za Dereva za Nguvu, Viwango - RF, Thyristors - SCR and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in IXYS IXTP3N120 electronic components. IXTP3N120 can be shipped within 24 hours after order. If you have any demands for IXTP3N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP3N120 Sifa za Bidhaa
Nambari ya Sehemu :
IXTP3N120
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1.2KV 3A TO-220AB
Mfululizo :
HiPerFET™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1350pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
200W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220AB
Kifurushi / Kesi :
TO-220-3
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