IXYS - IXFQ10N80P

KEY Part #: K6394744

IXFQ10N80P Bei (USD) [33519pcs Hisa]

  • 1 pcs$1.35927
  • 30 pcs$1.35251

Nambari ya Sehemu:
IXFQ10N80P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 800V 10A TO-3P.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Viwango - Bridge Rectifiers and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in IXYS IXFQ10N80P electronic components. IXFQ10N80P can be shipped within 24 hours after order. If you have any demands for IXFQ10N80P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFQ10N80P Sifa za Bidhaa

Nambari ya Sehemu : IXFQ10N80P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 800V 10A TO-3P
Mfululizo : HiPerFET™, PolarHT™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2050pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 300W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-3P
Kifurushi / Kesi : TO-3P-3, SC-65-3